Electric field switching in a resonant tunneling diode electroabsorption modulator

Figueiredo, J. M. L.; Ironside, C. N.; Stanley, C. R.

http://hdl.handle.net/10400.1/1194

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Authors

Figueiredo, J. M. L.

Ironside, C. N.

Stanley, C. R.

Abstract(s)

The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analyzed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz– Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28-dB optical modulation in a 200- m active length device. The advantage of the RTD-EAM over the conventional reverse-biased p–n junction EAM, is that the RTD-EAM has, in essence, an integrated electronic amplifier and, therefore, requires considerably less switching power.

Keywords

Resonant tunneling diode

URI

http://hdl.handle.net/10400.1/1194

Citation

Figueiredo, J.M.L.; Ironside, C.N.; Stanley, C.R.Electric field switching in a resonant tunneling diode electroabsorption modulator, IEEE Journal of Quantum Electronics, 37, 12, 1547-1552, 2001.