Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/1195
Título: Superhigh-frequency characteristics of optical modulators on the basis of InGaAlAs resonance-tunnel heterostructures
Autor: Aleshkin, V. Ya
Lyubchenko, V. E.
Figueiredo, J. M. L.
Ironside, C. N.
Stanley, C. R.
Palavras-chave: Resonant tunneling diode
Data: 2000
Editora: SpringerLink
Citação: Aleshkin, V Ya; Lyubchenko, V E; JML Figueiredo; Ironside, C.N.; STANLEY, C. R.Superhigh-Frequency Characteristics of Optical Modulators on the Basis of InGaAlAs Resonance-Tunnel Heterostructures, Journal of Communications Technology and Electronics, 45, 8, 911-914, 2000.
Resumo: The impedance of InGaAlAs resonance-tunnel heterostructures used for modulation of optical radiation is experimentally studied in the frequency range from 45 to 18 MHz. The dependence of their equivalent circuit on the bias voltage is determined. The spectrum of the harmonics of the current in the resistive frequency multiplication in such structures is calculated. The results confirm that these structures are promising as applied to the frequency multiplication. The effect of frequency multiplication is demonstrated experimentally at low frequencies.
Peer review: yes
URI: http://hdl.handle.net/10400.1/1195
ISSN: 1064-2269
Versão do Editor: http://www.springerlink.com/content/1064-2269/?MUD=MP
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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