Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/1205
Título: Integration of a RTD with an optical waveguide to form a high speed electroabsorption modulator
Autor: Figueiredo, J. M. L.
Ironside, C. N.
Leite, A. M. P.
Stanley, C. R.
Palavras-chave: High speed optical techniques
Optical waveguides
Resonant tunneling devices
Electro-absortion modulators
Data: Nov-1997
Relatório da Série N.º: IEE Colloquium (Digest);No. 1997/166
Resumo: High speed Optoelectronic modulation using the resonant tunnelling characteristics by interaction of a resonant tunnelling diode (RTD) in the middle of an unipolar ridge optical waveguide based on the GaAs/AlGaAs system is investigated. This interaction of an RTD within an optical waveguide introduces high non-linearities into the electrical characteristics of the waveguide by inducing large electric field changes on the collector region which give rise to a band-edge shift via the Franz-Keldysh effect that can be used for electroabsorption modulation up to millimeter-wave frequencies of light at photon energies close to the bandgap energy of the semiconductor, in this case around 900 nm. The device allows efficient high speed intensity modulation requiring a few hundreds of mV as drive voltage. Streak camera studies have shown around 4 dB modulation depth at 14 GHz for an applied voltage at 1 GHz of around 0.4 V, implying a bandwidth-to-voltage ratio of 33 GHz/V.
Peer review: yes
URI: http://hdl.handle.net/10400.1/1205
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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