Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3260
Título: Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure
Autor: Rocha, P. R. F.
Gomes, Henrique L.
Vandamme, L. K. J.
Chen, Q.
Kiazadeh, A.
De Leeuw, Dago M.
Meskers, S. C. J.
Palavras-chave: Diffusion noise
Electrical properties
Lowfrequency noise
Nonvolatile memory
Random telegraph noise
Resistive switching
Data: 2012
Editora: Institute of Electrical and Electronics Engineers (IEEE)
Citação: Rocha, P. R. F.; Gomes, H. L.; Vandamme, L. K. J.; Chen, Q.; Kiazadeh, A.; De Leeuw, D. M.; Meskers, S. C.J. Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure, IEEE Transactions on Electron Devices, 59, 9, 2483-24, 2012.
Resumo: Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a 1/fγ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10−21 cm2/Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3260
DOI: http://dx.doi.org/10.1109/TED.2012.2204059
ISSN: 0018-9383
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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