Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3285
Título: Determining carrier mobility with a metal–insulator–semiconductor structure
Autor: Stallinga, Peter
Benvenho, A. R. V.
Smits, E. C. P.
Mathijssen, S. G. J.
Cölle, M.
Gomes, Henrique L.
De Leeuw, Dago M.
Palavras-chave: Charge-carrier mobility
Admittance spectroscopy
MIS diode
Data: 2008
Editora: Elsevier
Citação: Stallinga, P.; Benvenho, A. R. V.; Smits, E. C. P.; Mathijssen, S. G. J.; Cölle, M.; Gomes, H. L.; De Leeuw, D. M. Determining carrier mobility with a metal–insulator–semiconductor structure, Organic Electronics, 9, 5, 735-739, 2008.
Resumo: The electron and hole mobility of nickel-bis(dithiolene) (NiDT) are determined in a metal– insulator–semiconductor (MIS)structure using admittance spectroscopy. The relaxation times found in the admittance spectra are attributed to the diffusion time of carriers to reach the insulator interface and via Einstein’s relation this yields the mobility values. In this way, an electron mobility of 1:9 104 cm2=Vs and a hole mobility of 3:9 106 cm2=Vs were found. It is argued that the low mobility is caused by an amphoteric mid-gap trap level. The activation energy for electrons and holes from these traps is found to be 0.46 eV and 0.40 eV, respectively.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3285
DOI: http://dx.doi.org/10.1016/j.orgel.2008.05.007
ISSN: 15661199
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

Ficheiros deste registo:
Ficheiro Descrição TamanhoFormato 
mis_mobility.pdf207,03 kBAdobe PDFVer/Abrir    Acesso Restrito. Solicitar cópia ao autor!


FacebookTwitterDeliciousLinkedInDiggGoogle BookmarksMySpace
Formato BibTex MendeleyEndnote Degois 

Todos os registos no repositório estão protegidos por leis de copyright, com todos os direitos reservados.