Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3286
Título: Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming
Autor: Bory, Benjamin F.
Meskers, S. C. J.
Janssen, R. A. J.
Gomes, Henrique L.
De Leeuw, Dago M.
Data: 2010
Editora: American Institute of Physics
Citação: Bory, B. F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, H. L.; De Leeuw, D. M. Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming, Applied Physics Letters, 97, 22, 222106-1-222106-3, 2010.
Resumo: Metal oxide-polymer diodes require electroforming before they act as nonvolatile resistive switching memory diodes. Here we investigate the early stages of the electroforming process in Al/Al2O3 /polyspirofluorene /Ba/Al diodes using quasistatic capacitance-voltage measurements. In the initial stage, electrons are injected into the polymer and then deeply trapped near the polyspirofluorene-Al2O3 interface. For bias voltages below 6 V, the number of trapped electrons is found to be CoxideV/q with Coxide as the geometrical capacitance of the oxide layer. This implies a density of traps for the electrons at the polymer-metal oxide interface larger than 31017 m−2.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3286
DOI: http://dx.doi.org/10.1063/1.3520517
ISSN: 0003-6951
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

Ficheiros deste registo:
Ficheiro Descrição TamanhoFormato 
2010 Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming APL.pdf158,95 kBAdobe PDFVer/Abrir


FacebookTwitterDeliciousLinkedInDiggGoogle BookmarksMySpace
Formato BibTex MendeleyEndnote Degois 

Todos os registos no repositório estão protegidos por leis de copyright, com todos os direitos reservados.