Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3297
Título: Electroforming process in metal-oxide-polymer resistive switching memories
Autor: Chen, Q.
Gomes, Henrique L.
Kiazadeh, A.
Rocha, P. R. F.
De Leeuw, Dago M.
Meskers, S. C. J.
Palavras-chave: Resistive random access memory (RRAM),
Electroforming soft-breakdown
Non-volatile memory
Data: 2012
Editora: Springer
Citação: Chen, Q.; Gomes, H.L.; Kiazadeh, A.; Rocha, P.R.F.; De Leeuw, D.M.; Meskers, S.C.J.Electroforming process in metal-oxide-polymer resistive switching memories, IFIP Advances in Information and Communication Technology, 372 A, NA, 527-534, 2012.
Resumo: Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3297
DOI: http://dx.doi.org/10.1007/978-3-642-28255-3_58
ISBN: 978-3-642-28254-6
Versão do Editor: http://link.springer.com/chapter/10.1007%2F978-3-642-28255-3_58#
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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