Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3298
Título: Study of trap states in zinc oxide (ZnO) thin films for electronic applications
Autor: Casteleiro, C.
Gomes, Henrique L.
Stallinga, Peter
Bentes, L.
Ayouchi, R.
Schwarz, R.
Palavras-chave: Thin film transistors
Thermally stimulated and depolarization current
Laser deposition
Defects
Data: 2008
Editora: Elsevier
Citação: Casteleiro, C.; Gomes, H. L.; Stallinga, P.; Bentes, L.; Ayouchi, R.; Schwarz, R. Study of trap states in zinc oxide (ZnO) thin films for electronic applications, Journal of Non-Crystalline Solids, 354, 19-25, 2519-2522, 2008.
Resumo: The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3298
DOI: http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.059
ISSN: 0022-3093
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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