Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6614
Título: Schottky barriers to semiconducting polymers
Autor: Taylor, D. M.
Gomes, Henrique L.
Data: 1994
Editora: IET
Resumo: Schottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky barriers on the development of electronic devices built from semiconducting polymers prompted this research. The article investigated the dc and ac admittance of Schottky barrier which occur at the interface between aluminum and poly(3-methyl thiophene) made ready by electropolymerisation. The experiment revealed that the interfacial layers occurring in polymer Schottky barriers is significant in the response of the controlling device.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6614
DOI: https://dx.doi.org/ 10.1049/ip-cds:19971003
ISSN: 0963-3308
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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