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- Electroforming process in metal-oxide-polymer resistive switching memoriesPublication . Chen, Q.; Gomes, Henrique L.; Kiazadeh, Asal; Rocha, Paulo R. F.; De Leeuw, Dago M.; Meskers, S. C. J.Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.
- New electronic memory device concepts based on metal oxide-polymer nanostructures planer diodesPublication . Kiazadeh, Asal; Rocha, P. R. F.; Chen, Q.; Gomes, Henrique L.Nanostructure silver oxide thin films diodes can exhibit resistive switching effects. After an electroforming process the device can be programmed between a low conductance (off-state) and high conductance (on- state) with a voltage pulse and they are already being considered for non-volatile memory applications. However, the origin of programmable resistivity changes in a network of nanostructure silver oxide embedded in polymer is still a matter of debate. This work provides some results on a planer diode which may help to elucidate resistive switching phenomena in nanostructure metal oxide diodes. The XRD pattern after switching appears with different crystalline planes, plus temperature dependent studies reveal that conduction of both on and off states is weak thermal activated. Intriguing the carrier transport is the same for both on and off-states. Difference between states comes from the dramatic changes in the carrier density. The main mechanism of charge transport for on-state is tunneling. The charge transport leads to SCLC in higher voltages pulse for the off state. The mechanism will be explained based on percolation concepts.
- The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memoriesPublication . Rocha, Paulo R. F.; Kiazadeh, Asal; De Leeuw, Dago M.; Meskers, S. C. J.; Verbakel, F.; Taylor, D. M.; Gomes, Henrique L.The dynamic response of a non-volatile, bistable resistive memory fabricated in the form of Al2O3/polymer diodes has been probed in both the off- and on-state using triangular and step voltage profiles. The results provide insight into the wide spread in switching times reported in the literature and explain an apparently anomalous behaviour of the on-state, namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon. The off-state response follows closely the predictions based on a classical, two-layer capacitor description of the device. As voltage scan rates increase, the model predicts that the fraction of the applied voltage, Vox , appearing across the oxide decreases. Device responses to step voltages in both the off- and on-state show that switching events are characterized by a delay time. Coupling such delays to the lower values of Vox attained during fast scan rates, the anomalous observation in the on-state that, device currents decrease with increasing voltage scan rate, is readily explained. Assuming that a critical current is required to turn off a conducting channel in the oxide, a tentative model is suggested to explain the shift in the onset of negative differential resistance to lower voltages as the voltage scan rate increases. The findings also suggest that the fundamental limitations on the speed of operation of a bilayer resistive memory are the time- and voltage-dependences of the switch-on mechanism and not the switch-off process.
- Bioelectrical signal detection using conducting polymer electrodes and the displacement current methodPublication . Inácio, Pedro; Mestre, Ana L G; Medeiros, C.R.; Asgarifar, Sanaz; ELAMINE, Youssef; Canudo, Joana; Santos, João; Bragança, José; Morgado, Jorge; Biscarini, Fabio; Gomes, Henrique L.Conducting polymer electrodes based on poly (3, 4 ethylenedioxythiophene): polystyrene sulfonate were used to record electrophysiological signals from autonomous cardiac contractile cells present in embryoid bodies. Signal detection was carried out by measuring the displacement current across the polymer/electrolyte double-layer capacitance, and compared with voltage detection. While for relatively low capacitance electrodes, the voltage amplification provides higher signal quality, and for high capacitive electrodes, the displacement current method exhibits a higher signal-to-noise ratio. It is proposed that the displacement current method combined with high capacitive polymer-based electrodes is adequate to measure clusters of cells and whole organs. Our approach has a great potential in fundamental studies of drug discovery and safety pharmacology.
- Confocal scanning raman spectroscopy (CSRS) of an operating organic light-emitting diodePublication . Paez-Sierra, B. A.; Gomes, Henrique L.Organic molecules with semiconducting properties are becoming nowadays core of the organic-based electronic era. Although organic light emitting diodes (OLEDs) have already matured for commercial applications, they still require longer device lifetimes. Some of the long-standing challenges in OLED technology relay on degradation and failure mechanisms. Several authors observed that degradation and subsequent damage of OLEDs is accompanied by formation of dark non-emissive spots [1-2]. Implementation of the confocal scanning Raman spectroscopy (CSRS) measurements helps to understand the chemistry, physics of OLEDs and moreover to have better confidence on their quality assurance.
- Ultrasensitive gold micro-structured electrodes enabling the detection of extra-cellular long-lasting potentials in astrocytes populationsPublication . Mestre, Ana L. G.; Cerquido, Monica; INÁCIO, PEDRO; Asgarifar, Sanaz; Lourenco, Ana S.; Lurdes S. Cristiano, M.; Aguiar, Paulo; Medeiros, Maria C. R.; Araújo, Inês; Ventura, Joao; Gomes, Henrique L.Ultra-sensitive electrodes for extracellular recordings were fabricated and electrically characterized. A signal detection limit defined by a noise level of 0.3-0.4 mu V for a bandwidth of 12.5 Hz was achieved. To obtain this high sensitivity, large area (4 mm(2)) electrodes were used. The electrode surface is also micro-structured with an array of gold mushroom-like shapes to further enhance the active area. In comparison with a flat gold surface, the micro-structured surface increases the capacitance of the electrode/electrolyte interface by 54%. The electrode low impedance and low noise enable the detection of weak and low frequency quasi-periodic signals produced by astrocytes populations that thus far had remained inaccessible using conventional extracellular electrodes. Signals with 5 mu V in amplitude and lasting for 5-10 s were measured, with a peak-to-peak signal-to-noise ratio of 16. The electrodes and the methodology developed here can be used as an ultrasensitive electrophysiological tool to reveal the synchronization dynamics of ultra-slow ionic signalling between non-electrogenic cells.
- Switching speed in resistive random access memories (RRAMS) based on plastic semiconductorPublication . Rocha, P. F.; Gomes, Henrique L.; Kiazadeh, Asal; Chen, Q.; De Leeuw, D. M.; Meskers, S. C. J.This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required. © 2011 Materials Research Society.
- Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistorsPublication . Andringa, Anne-Marije; Vlietstra, N.; Smits, E. C. P.; Spijkman, Mark-Jan; Gomes, Henrique L.; Klootwijk, J. H.; Blom, P. W. M.; De Leeuw, Dago M.Nitrogen dioxide (NO2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated relaxation times. We find an activation energy of 0.1 eV for trapping and 1.2 eV for detrapping. The attempt-to-escape frequency and characteristic temperature have been determined as 1 Hz and 960 K for charge trapping and 1011 Hz and 750 K for recovery, respectively. Thermally stimulated current measurements confirm the presence of trapped charge carriers with a trap depth of around 1 eV. The obtained functional dependence is used as input for an analytical model that predicts the sensor’s temporal behavior. The model is experimentally verified and a real-time sensor has been developed. The perfect agreement between predicted and measured sensor response validates the methodology developed. The analytical description can be used to optimize the driving protocol. By adjusting the operating temperature and the duration of charging and resetting, the response time can be optimized and the sensitivity can be maximized for the desired partial NO2 pressure window.
- Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductorPublication . Rocha, Paulo R. F.; Kiazadeh, Asal; Chen, Q.; Gomes, Henrique L.Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
- Electrochemical noise and impedance of Au electrode/electrolyte interfaces enabling extracellular detection of glioma cell populationsPublication . Schlett, Paul; Kintzel, Ulrike; Mailaender, Volker; Vandamme, Lode K. J.; Zeck, Gunther; Gomes, Henrique L.; Biscarini, Fabio; de Leeuw, Dago M.Microelectrode arrays (MEA) record extracellular local field potentials of cells adhered to the electrodes. A disadvantage is the limited signal-to-noise ratio. The state-of-the-art background noise level is about 10 mu Vpp. Furthermore, in MEAs low frequency events are filtered out. Here, we quantitatively analyze Au electrode/electrolyte interfaces with impedance spectroscopy and noise measurements. The equivalent circuit is the charge transfer resistance in parallel with a constant phase element that describes the double layer capacitance, in series with a spreading resistance. This equivalent circuit leads to a Maxwell-Wagner relaxation frequency, the value of which is determined as a function of electrode area and molarity of an aqueous KCl electrolyte solution. The electrochemical voltage and current noise is measured as a function of electrode area and frequency and follow unambiguously from the measured impedance. By using large area electrodes the noise floor can be as low as 0.3 mu Vpp. The resulting high sensitivity is demonstrated by the extracellular detection of C6 glioma cell populations. Their minute electrical activity can be clearly detected at a frequency below about 10 Hz, which shows that the methodology can be used to monitor slow cooperative biological signals in cell populations.