Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/2720
Título: Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles
Autor: Kiazadeh, A.
Gomes, Henrique L.
Rosa da Costa, Ana
Moreira, José A.
De Leeuw, Dago M.
Meskers, S. C. J.
Palavras-chave: Nanoparticles
Resistive switching
Non-volatile memory
Data: 30-Ago-2012
Editora: Elsevier
Citação: Kiazadeh, Asal; Gomes, Henrique L.; Rosa da Costa, Ana M.; Moreira, José A.; de Leeuw, Dago M.; Meskers, Stefan C. J.Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles, Thin Solid Films, 522, N/A, 407-411, 2012.
Resumo: Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.
Peer review: yes
URI: http://hdl.handle.net/10400.1/2720
DOI: http://dx.doi.org/10.1016/j.tsf.2012.08.041
ISSN: 0040-6090
Versão do Editor: http://www.sciencedirect.com/science/article/pii/S0040609012010784
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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