Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3253
Título: Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes
Autor: Chen, Q.
Bory, Benjamin F.
Kiazadeh, A.
Rocha, P. R. F.
Gomes, Henrique L.
Verbakel, F.
De Leeuw, Dago M.
Meskers, S. C. J.
Data: 2011
Editora: American Institute of Physics AIP
Citação: Chen, Qian; Bory, Benjamin F.; Kiazadeh, Asal; Rocha, Paulo R. F.; Gomes, Henrique L.; Verbakel, Frank; De Leeuw, Dago M.; Meskers, Stefan C. J. Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes, Applied Physics Letters, 99, 8, 83305-83, 2011.
Resumo: Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. The amount of stored charge is determined from the optically induced discharging current transient as a function of applied voltage and oxide thickness. When the charge density exceeds 8 1017/m2, an irreversible soft breakdown transition occurs to a non-volatile memory diode.
Peer review: yes
URI: http://hdl.handle.net/10400.1/3253
DOI: http://dx.doi.org/10.1063/1.3628301
ISSN: 0003-6951
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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