Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/3314
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dc.contributor.authorRocha, P. R. F.-
dc.contributor.authorKiazadeh, A.-
dc.contributor.authorChen, Q.-
dc.contributor.authorGomes, Henrique L.-
dc.date.accessioned2014-01-09T10:16:10Z-
dc.date.available2014-01-09T10:16:10Z-
dc.date.issued2012-
dc.identifier.citationRocha, P. R. F.; Kiazadeh, A.; Chen, Q.; Gomes, H. L. Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor, IFIP Advances in Information and Communication Technology, 372 A, NA, 535-540, 2012.por
dc.identifier.otherAUT: HGO00803;-
dc.identifier.urihttp://hdl.handle.net/10400.1/3314-
dc.description.abstractResistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.por
dc.language.isoengpor
dc.publisherSpringerpor
dc.rightsopenAccesspor
dc.subjectResistive Random Access Memory (RRAM)por
dc.subjectSwitchingpor
dc.subjectElectrical Bistabilitypor
dc.subjectNon-Volatile Memorypor
dc.subjectNegative Differential Resistance (NDR)por
dc.titleDynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductorpor
dc.typearticlepor
dc.date.updated2014-01-02T21:06:14Z-
degois.publication.issueNApor
degois.publication.firstPage535por
degois.publication.lastPage540por
degois.publication.titleIFIP Advances in Information and Communication Technologypor
dc.relation.publisherversionhttp://link.springer.com/chapter/10.1007/978-3-642-28255-3_59por
dc.peerreviewedyespor
degois.publication.volume372 Apor
dc.identifier.doihttp://dx.doi.org/10.1007/978-3-642-28255-3_59-
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