Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6593
Título: DLTS investigation of acceptor states in P3MeT Schottky barrier diodes
Autor: Jones, G. W.
Taylor, D. M.
Gomes, Henrique L.
Data: 1997
Editora: Elsevier Science
Resumo: Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6593
DOI: https://dx.doi.org/10.1016/S0379-6779(97)80262-7
ISSN: 0379-6779
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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