Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6604
Título: Modeling electrical characteristics of thin-film field-effect transistors I. Trap-free materials
Autor: Stallinga, Peter
Gomes, Henrique L.
Data: 2006
Editora: Elsevier
Resumo: A new analytical model is developed for thin-film field-effect transistors (TFTs). The active layer of the devices is considered purely two-dimensional. In the first part, the basic model is developed for intrinsic materials. It is demonstrated that it accurately describes the electrical characteristics and elucidates on the physical meaning of the device and material parameters, such as threshold voltage and sub-threshold current. It also clarifies the nature of so-called contact effects, often used in literature to explain non-linear I-V curves. Furthermore, ambipolar devices are treated. (c) 2006 Elsevier B.V. All rights reserved.
Peer review: yes
URI: http://hdl.handle.net/10400.1/6604
DOI: https://dx.doi.org/10.1016/j.synthmet.2006.09.015
ISSN: 0379-6779
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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