Utilize este identificador para referenciar este registo: http://hdl.handle.net/10400.1/6620
Título: Electrical characterization of organic based transistors: stability issues
Autor: Gomes, Henrique L.
Stallinga, Peter
Dinelli, F.
Murgia, M.
Biscarini, F.
De Leeuw, D. M.
Muccini, M.
Mullen, K.
Data: 2005
Editora: John Wiley and Sons
Resumo: An investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T approximate to 220 K and the other at T approximate to 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and alpha-sexithiophene deposition parameters. Copyright (c) 2005 John Wiley A Sons, Ltd.
URI: http://hdl.handle.net/10400.1/6620
DOI: https://dx.doi.org/10.1002/pat.558
ISSN: 1042-7147
Aparece nas colecções:FCT2-Artigos (em revistas ou actas indexadas)

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