Kiazadeh, AsalRocha, P. R.Chen, Q.Gomes, Henrique L.2015-06-262015-06-262011978-3-642-19170-11868-4238AUT: HGO00803;http://hdl.handle.net/10400.1/6646It is demonstrated that planar structures based on silver nanoparticleshosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.engResistive Random Access Memories (RRAMs) Based on Metal Nanoparticlesconference objecthttps://dx.doi.org/10.1007/978-3-642-19170-1_65