Bessergenev, V.Mateus, Maria da ConceiçãoVasconcelos, D. A.Mariano, Josédo Rego, A. M. BotelhoLange, R.Burkel, E.2018-12-072018-12-0720121110-662Xhttp://hdl.handle.net/10400.1/12068The TiO2 thin films were prepared using Ti(dpm)(2)(OPri)(2) and Ti(OPri)(4) (dpm = 2,2,6,6-tetramethylheptane-3,5-dione, Pr-i = isopropyl) as the precursors. The volatile compounds Fe[(C2H5)(2)NCS2](3) and [(CH3)C](2)S-2 were used to prepare doped TiO2 films. The synthesis was done in vacuum or in the presence of Ar and O-2. The pressure in the CVD chamber was varied between 1.2 x 10(-4) mbar and 0.1 mbar, with the system working either in the molecular beam or gas flow regime. Physical, chemical, and photocatalytic properties of the (Fe, S)-doped TiO2 films were studied. Those TiO2:(Fe, S) films prepared from the Ti(OPri)(4) precursor show increased photocatalytic activities, very close to those of Degussa P25 powder in UV region.engVisible-Light PhotocatalysisDoped Titanium-DioxideIon-ImplantationElectronic-StructuresFeDepositionPhotodegradationDegradationAnataseOxidesjournal article10.1155/2012/767054