Gomes, Henrique L.Jones, G. W.Taylor, D. M.2015-06-262015-06-2619970379-6779AUT: HGO00803;http://hdl.handle.net/10400.1/6596Evidence is presented which shows that anomalies in the I-V characteristics of Schottky diodes formed from electrodeposited poly(3-methylthiophene) are related to the time films are held under vacuum prior to deposition of the rectifying aluminium electrode. For short times (similar to 15 mins) a plateau appears in the forward bias characteristic which disappears leading to a significant voltage offset as the device ages or is driven into high forward bias.engjournal articlehttps://dx.doi.org/10.1016/S0379-6779(97)80267-6