Aleshkin, V. YaReggiani, L.Alkeev, N. V.Lyubchenko, V. E.Ironside, C. N.Figueiredo, J. M. L.Stanley, C. R.2012-06-052012-06-052003Aleshkin, V Ya; Reggiani, L; Alkeev, N V; Lyubchenko, V E; Ironside, C N; Figueiredo, J M L; Stanley, C R. Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transport, Semiconductor Science and Technology, 18, 6, 35-38, 2003.0268-1242AUT: JLO01539;http://hdl.handle.net/10400.1/1193Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of coherent transport regime and can occur at zero temperature as a consequence of the Pauli principle or at sufficiently high temperatures above 77 K as a consequence of a long-range Coulomb interaction. These predictions are in agreement with experimental data.engResonant tunneling diodejournal article2012-05-11