Aleshkin, V. YaReggiani, L.Alkeev, N. V.Lyubchenko, V. E.Ironside, C. N.Figueiredo, J. M. L.Stanley, C. R.2012-05-312012-05-312004Aleshkin, V Ya; Reggiani, L; Alkeev, N V; Lyubchenko, V E; Ironside, C N; Figueiredo, J M L; Stanley, C R. Reply to Comment on  Giant suppression of shot-noise in double barrier resonant diode: a signature of coherent transport , Semiconductor Science and Technology, 19, 5, 665-666, 2004.0268-1242AUT: JLO01539;http://hdl.handle.net/10400.1/1185Shot noise suppression below 1/2 of the full Poisson value in double barrier resonant diodes is confirmed to be a signature of coherent rather than sequential tunnelling transport. We reply to the arguments of the previous comment which dispute the above claim. We anticipate the development of a rigorous theory that improves previous approaches without contradicting the essential findings we recently reported (Aleshkin et al 2003 Semicond. Sci. Technol. 18 L35).engResonant tunneling diodejournal article2012-05-11