Stallinga, Peter2024-06-272024-06-272024-080379-6779http://hdl.handle.net/10400.1/25544In this work, the transient techniques for disordered organic thin film transistors are analyzed. A special emphasis is made on stress. Stress in this work is the continuous increase of the threshold voltage upon applying a gate bias. In this work a new stress evaluation method is presented that allows for a rapid determination of stress. Moreover, a figure -of -merit is proposed that can be applied to non -exponential transients, including those of stressing. The transients are compared to the empirical transient functions reported in literature that range from power -law to stretched exponential and logarithmic.engjournal article10.1016/j.synthmet.2024.117603