Wang, JueRodrigues, G. C.Al-Khalidi, AbdullahFigueiredo, JoséWasige, EdwardCosta, M. F. M.2018-12-072018-12-072017978-1-5106-1384-3978-1-5106-1383-60277-786X1996-756Xhttp://hdl.handle.net/10400.1/11994Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.engResonant tunnelling diode based high speed optoelectronic transmittersconference object10.1117/12.2276350