Taylor, D. M.Gomes, Henrique L.2015-06-262015-06-2619950084-9162AUT: HGO00803;http://hdl.handle.net/10400.1/6611Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methyl thiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 10 24-10 26 m -3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier.engconference objecthttp://dx.doi.org/ 10.1109/CEIDP.1995.483807