Stallinga, PeterGomes, Henrique L.Biscarini, F.Murgia, M.De Leeuw, D. M.2015-06-262015-06-2620040021-8979AUT: PJO01566; HGO00803;http://hdl.handle.net/10400.1/6625The electronic conduction of thin-film field-effect-transistors (FETs) of sexithiophene was studied. In most cases the transfer curves deviate from standard FET theory; they are not linear, but follow a power law instead. These results are compared to conduction models of "variable-range hopping" and "multi-trap-and-release". The accompanying IV curves follow a Poole-Frenkel (exponential) dependence on the drain voltage. The results are explained assuming a huge density of traps. Below 200 K, the activation energy for conduction was found to be ca. 0.17 eV. The activation energies of the mobility follow the Meyer-Neldel rule. A sharp transition is seen in the behavior of the devices at around 200 K. The difference in behavior of a micro-FET and a submicron FET is shown. (C) 2004 American Institute of Physics.engjournal articlehttps://dx.doi.org/10.1063/1.1789279