Chen, Q.Gomes, Henrique L.Kiazadeh, AsalRocha, Paulo R. F.De Leeuw, Dago M.Meskers, S. C. J.2014-01-072014-01-072012Chen, Q.; Gomes, H.L.; Kiazadeh, A.; Rocha, P.R.F.; De Leeuw, D.M.; Meskers, S.C.J.Electroforming process in metal-oxide-polymer resistive switching memories, IFIP Advances in Information and Communication Technology, 372 A, NA, 527-534, 2012.978-3-642-28254-6AUT: HGO00803;http://hdl.handle.net/10400.1/3297Electroforming of an Al/Al2O3/polymer/Al esistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.engResistive random access memory (RRAM),Electroforming soft-breakdownNon-volatile memorybook part2014-01-03http://dx.doi.org/10.1007/978-3-642-28255-3_58