Stallinga, PeterGomes, Henrique L.Charas, A.Morgado, J.Alcacer, L.2015-06-262015-06-2620010379-6779AUT: PJO01566; HGO00803;http://hdl.handle.net/10400.1/6644Poly(phenylene vinylene) (PPV) grown via the precursor route, deposited on top of heavily doped n-type silicon, was studied using electrical measurement techniques. The results are compared to PPV grown via deposition of soluble derivative (MEH-PPV). The two types are very similar. They have comparable free carrier densities and both show minority-carrier effects. The activation energy found via the loss tangent is 0.13 eV. The effect of exposure to oxygen is visible in the capacitance and the current.engElectrical characterization of pn-junctions of PPV and siliconjournal articlehttps://dx.doi.org/10.1016/S0379-6779(00)01174-7