Gomes, Henrique L.Benvenho, A. R. V.De Leeuw, Dago M.Cölle, M.Stallinga, PeterVerbakel, F.Taylor, D. M.2014-01-032014-01-032008GOMES, HL; BENVENHO, ARV; DE LEEUW, DM; COLLE, M; STALLINGA, P; VERBAKEL, F; TAYLOR, DM. Switching in polymeric resistance random-access memories (RRAMS), ORGANIC ELECTRONICS, 9, 1, 119-128, 2008.1566-1199AUT: PJO01566; HGO00803;http://hdl.handle.net/10400.1/3273Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.engOrganic memorySwitchingImpedance spectroscopyOxideTrapsjournal article2014-01-02http://dx.doi.org/10.1016/j.orgel.2007.10.002