Kiazadeh, A.Gomes, Henrique L.Costa, Ana M. Rosa daMoreira, José A.De Leeuw, Dago M.Meskers, S. C. J.2013-12-172013-12-172012Kiazadeh, Asal; Gomes, Henrique L.; Rosa da Costa, Ana M.; Moreira, Jose A.; de Leeuw, Dago M.; Meskers, Stefan C. J. Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles, Thin Solid Films, 522, NA, 407-411, 2012.0040-6090AUT: HGO00803; AMC01695; JMO01545;http://hdl.handle.net/10400.1/3252Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current–voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters.engNanoparticlesResistive switchingNon-volatile memoryjournal article2013-12-16http://dx.doi.org/10.1016/j.tsf.2012.08.041