Rocha, Paulo R. F.Kiazadeh, AsalChen, Q.Gomes, Henrique L.2014-01-092014-01-092012Rocha, P. R. F.; Kiazadeh, A.; Chen, Q.; Gomes, H. L. Dynamic behavior of Resistive Random Access Memories (RRAMS) based on plastic semiconductor, IFIP Advances in Information and Communication Technology, 372 A, NA, 535-540, 2012.AUT: HGO00803;http://hdl.handle.net/10400.1/3314Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.engResistive Random Access Memory (RRAM)SwitchingElectrical BistabilityNon-Volatile MemoryNegative Differential Resistance (NDR)journal article2014-01-02http://dx.doi.org/10.1007/978-3-642-28255-3_59