Stallinga, PeterGomes, Henrique L.2015-06-262015-06-2620060078-5466AUT: PJO01566; HGO00803;http://hdl.handle.net/10400.1/6623A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an adequate description of the electrical characteristics.engjournal article