Casteleiro, C.Gomes, Henrique L.Stallinga, PeterBentes, L.Ayouchi, R.Schwarz, R.2014-01-082014-01-082008Casteleiro, C.; Gomes, H. L.; Stallinga, P.; Bentes, L.; Ayouchi, R.; Schwarz, R. Study of trap states in zinc oxide (ZnO) thin films for electronic applications, Journal of Non-Crystalline Solids, 354, 19-25, 2519-2522, 2008.0022-3093AUT: HGO00803; PJO01566;http://hdl.handle.net/10400.1/3298The electrical properties of ZnO thin films grown by pulsed laser deposition were studied. Field-effect devices with a mobility reaching 1 cm2/V s show non-linearities both in the current–voltage and in the transfer characteristics which are explained as due to the presence of trap states. These traps cause a reversible threshold voltage shift as revealed by low-frequency capacitance–voltage measurements in metal insulator semiconductor (MIS) capacitors. Thermal detrapping experiments in heterojunctions confirm the presence of a trap state located at 0.32 eV.engThin film transistorsThermally stimulated and depolarization currentLaser depositionDefectsjournal article2014-01-02http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.059