Jones, G. W.Taylor, D. M.Gomes, Henrique L.2015-06-262015-06-2619970379-6779AUT: HGO00803;http://hdl.handle.net/10400.1/6593Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.engjournal articlehttps://dx.doi.org/10.1016/S0379-6779(97)80262-7