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- Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methodsPublication . Gomes, Henrique L.; Stallinga, Peter; Rost, H.; Holmes, A. B.; Harrison, M. G.; Friend, R. H.Transient capacitance methods were applied to the depletion region of an abrupt asymmetric n(+) -p junction of silicon and unintentionally doped poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] (MEH-PPV). Studies in the temperature range 100-300 K show the presence of a majority-carrier trap at 1.0 eV and two minority traps at 0.7 and 1.3 eV, respectively. There is an indication for more levels for which the activation energy could not be determined. Furthermore, admittance data reveal a bulk activation energy for conduction of 0.12 eV, suggesting the presence of an additional shallow acceptor state. (C) 1999 American Institute of Physics. [S0003-6951(99)02308-6].
- Determination of deep and shallow levels in conjugated polymers by electrical methodsPublication . Stallinga, Peter; Gomes, Henrique L.; Rost, H.; Holmes, A. B.; Harrison, M. G.; Friend, R. H.; Biscarini, F.; Taliani, C.; Jones, G. W.; Taylor, D. M.Conjugated organic semiconductors have been submitted to various electrical measurement techniques in order to reveal information about shallow levels and deep traps in the forbidden gap. The materials consisted of poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] (MEH-PPV), poly(3-methylthiophene) (PMeT), and alpha-sexithienyl (alpha T6) and the employed techniques were IV, CV, admittance spectroscopy, TSC, capacitance and current transients. (C) 1999 Elsevier Science B.V. All rights reserved.
- Electrical study of impurity states in conjugated polymersPublication . Stallinga, Peter; Gomes, Henrique L.; Jones, G. W.; Taylor, D. M.Schottky diodes resulting from an intimate contact of aluminum on electro-deposited poly(3-methylthiopene), PMeT, have been studied by admittance spectroscopy, capacitance-voltage and current-voltage measurements, and optically-induced current transients. The loss-tangents show the existence of interface states that can be removed by vacuum annealing, also visible in the transients. Furthermore, the CV curves don't substantiate the idea of movement of the dopant ions.
- Electrical characterization of semiconducting polymersPublication . Stallinga, Peter; Gomes, Henrique L.; Jones, G. W.; Taylor, D. M.Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.