NoE FlexNet - Network of Excellence for building up Knowledge for improved Systems Integration for Flexible Organic and Large Area Electronics (FOLAE) and its exploitation

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Publications

Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

Publication . Chen, Q.; Bory, Benjamin F.; Kiazadeh, Asal; Rocha, Paulo R. F.; Gomes, Henrique L.; Verbakel, F.; De Leeuw, Dago M.; Meskers, S. C. J.

Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. The amount of stored charge is determined from the optically induced discharging current transient as a function of applied voltage and oxide thickness. When the charge density exceeds 8 1017/m2, an irreversible soft breakdown transition occurs to a non-volatile memory diode.

2011Journal article

Open access

Switching speed in resistive random access memories (RRAMS) based on plastic semiconductor

Publication . Rocha, P. F.; Gomes, Henrique L.; Kiazadeh, Asal; Chen, Q.; De Leeuw, D. M.; Meskers, S. C. J.

This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit. It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required. © 2011 Materials Research Society.

2011Conference object

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