Browsing by Author "Aleshkin, V. Ya"
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- Coherent approach to transport and noise in double-barrier resonant diodesPublication . Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double-barrier resonant diodes. The theory applies to the region of low applied voltages up to the region of the current peak and considers the wide temperature range from zero to room temperature. The shape of the current voltage characteristic is well reproduced and we confirm that even in the presence of Coulomb interaction the shot noise can be suppressed with a Fano factor well below the value of 0.5. This feature can be an indication of coherent tunneling since the standard sequential tunneling predicts in general a Fano factor equal to or greater than the value 0.5. This giant suppression is a consequence of Pauli principle as well as long range Coulomb interaction. The theory generalizes previous findings and is compared with experiments.
- Giant suppression of shot noise as signature of coherent transport in double barrier resonant diodesPublication . Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of the coherent transport regime and can occur near zero temperature as a consequence of the Pauli principle or above about 77 K as a consequence of long range Coulomb interaction. These predictions are validated by experimental data.
- Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transportPublication . Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of coherent transport regime and can occur at zero temperature as a consequence of the Pauli principle or at sufficiently high temperatures above 77 K as a consequence of a long-range Coulomb interaction. These predictions are in agreement with experimental data.
- Reply to comment on 'Giant suppression of shot-noise in double barrier resonant diode: a signature of coherent transport'Publication . Aleshkin, V. Ya; Reggiani, L.; Alkeev, N. V.; Lyubchenko, V. E.; Ironside, C. N.; Figueiredo, J. M. L.; Stanley, C. R.Shot noise suppression below 1/2 of the full Poisson value in double barrier resonant diodes is confirmed to be a signature of coherent rather than sequential tunnelling transport. We reply to the arguments of the previous comment which dispute the above claim. We anticipate the development of a rigorous theory that improves previous approaches without contradicting the essential findings we recently reported (Aleshkin et al 2003 Semicond. Sci. Technol. 18 L35).
- Superhigh-frequency characteristics of optical modulators on the basis of InGaAlAs resonance-tunnel heterostructuresPublication . Aleshkin, V. Ya; Lyubchenko, V. E.; Figueiredo, J. M. L.; Ironside, C. N.; Stanley, C. R.The impedance of InGaAlAs resonance-tunnel heterostructures used for modulation of optical radiation is experimentally studied in the frequency range from 45 to 18 MHz. The dependence of their equivalent circuit on the bias voltage is determined. The spectrum of the harmonics of the current in the resistive frequency multiplication in such structures is calculated. The results confirm that these structures are promising as applied to the frequency multiplication. The effect of frequency multiplication is demonstrated experimentally at low frequencies.