Browsing by Author "Dinelli, F."
Now showing 1 - 2 of 2
Results Per Page
Sort Options
- Bias-induced threshold voltages shifts in thin-film organic transistorsPublication . Gomes, Henrique L.; Stallinga, Peter; Dinelli, F.; Murgia, M.; Biscarini, F.; De Leeuw, D. M.; Muck, T.; Geurts, J.; Molenkamp, L. W.; Wagner, V.An investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at Tapproximate to220 K and the other at Tapproximate to300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. (C) 2004 American Institute of Physics.
- Electrical characterization of organic based transistors: stability issuesPublication . Gomes, Henrique L.; Stallinga, Peter; Dinelli, F.; Murgia, M.; Biscarini, F.; De Leeuw, D. M.; Muccini, M.; Mullen, K.An investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at T approximate to 220 K and the other at T approximate to 300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and alpha-sexithiophene deposition parameters. Copyright (c) 2005 John Wiley A Sons, Ltd.