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- Switching in polymeric resistance random-access memories (RRAMS)Publication . Gomes, Henrique L.; Benvenho, A. R. V.; De Leeuw, Dago M.; Cölle, M.; Stallinga, Peter; Verbakel, F.; Taylor, D. M.Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.
- Switching dynamics in non-volatile polymer memoriesPublication . Verbakel, F.; Meskers, S. C. J.; Janssen, R. A. J.; Gomes, Henrique L.; van den Biggelaar, A. J. M.; De Leeuw, Dago M.The time dependence of resistive switching in metal-metal oxide-organic semiconductormetal diodes is investigated. The switching dynamics is controlled by two intrinsic time dependences. A single switching event occurs in a time scale of 400 nanoseconds, but the maximum repetitive switching between ON- and OFF-states is limited by a ‘‘dead time” of a few milliseconds. The dead time is the waiting time after programming in which a next switch is inhibited. Therefore, fast repetitive pulsing prevents the observation of non-volatile switching and limits the maximum clock rate at which these memories can be used. Understanding the origin of this dead time is crucial to future memory applications. Furthermore,the occurrence of a dead time is possibly the origin of the huge variation in the reported switching times.