Switching in polymeric resistance random-access memories (RRAMS)

Gomes, Henrique L.; Benvenho, A. R. V.; De Leeuw, Dago M.; Cölle, M.; Stallinga, Peter; Verbakel, F.; Taylor, D. M.

http://hdl.handle.net/10400.1/3273

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Resumo(s)

Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.

Palavras-chave

Organic memory Switching Impedance spectroscopy Oxide Traps

URI

http://hdl.handle.net/10400.1/3273

Citação

GOMES, HL; BENVENHO, ARV; DE LEEUW, DM; COLLE, M; STALLINGA, P; VERBAKEL, F; TAYLOR, DM. Switching in polymeric resistance random-access memories (RRAMS), ORGANIC ELECTRONICS, 9, 1, 119-128, 2008.

Editora

Elsevier

DOI

http://dx.doi.org/10.1016/j.orgel.2007.10.002

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

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