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Interface properties and capacitance-voltage behaviour of diamond devices prepared by microwave-assisted CVD

1999Journal article Restricted access
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dc.contributor.authorRodrigues, A. M.
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorRees, J. A.
dc.contributor.authorPereira, L.
dc.contributor.authorPereira, E.
dc.date.accessioned2015-06-26T14:18:44Z
dc.date.available2015-06-26T14:18:44Z
dc.date.issued1999
dc.description.abstractFree standing diamond films were used to study the effect of diamond surface morphology and microstructure on the electrical properties of Schottky barrier diodes. By using free standing films both the rough top diamond surface and the very smooth bottom surface are available for post-metal deposition. Rectifying electrical contacts were then established either with the smooth or the rough surface. The estimate of doping density from the capacitance-voltage plots shows that the smooth surface has a lower doping density when compared with the top layers of the same film. The results also show that surface roughness does not contribute significantly to the frequency dispersion of the small signal capacitance. The electrical properties of an abrupt asymmetric n(+)(silicon)-p(diamond) junction have also been measured. The I-V curves exhibit at low temperatures a plateau near zero bias, and show inversion of rectification. Capacitance-voltage characteristics show a capacitance minimum with forward bias, which is dependent on the environment conditions. It is proposed that this anomalous effect arises from high level injection of minority carriers into the bulk.
dc.identifier.doihttps://dx.doi.org/ 10.1002/(SICI)1521-396X(199907)174:1<165::AID-PSSA165>3.0.CO;2-L
dc.identifier.issn0031-8965
dc.identifier.otherAUT: HGO00803; ARO00704;
dc.identifier.urihttp://hdl.handle.net/10400.1/6616
dc.language.isoeng
dc.peerreviewedyes
dc.publisherWiley
dc.relation.isbasedonP-001-3V4
dc.titleInterface properties and capacitance-voltage behaviour of diamond devices prepared by microwave-assisted CVD
dc.typejournal article
dspace.entity.typePublication
oaire.citation.conferencePlaceDiepenbeek Hasselt, Belgium
oaire.citation.endPage170
oaire.citation.issue1
oaire.citation.startPage165
oaire.citation.titlePhysica Status Solidi a Applied Research
oaire.citation.titleIV International Workshop on Surface and Bulk Defects in CVD Diamond and Related Films
oaire.citation.volume174
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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