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Modeling of light-sensitive resonant-tunneling-diode devices
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We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I –V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results
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Coelho, I. J. S.; Figueiredo, José M. L.; Ironside, C.N.Modeling of light-sensitive resonant-tunneling-diode devices, Journal of Applied Physics, 95, 12, 8258-8263, 2004.