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Bias-induced threshold voltages shifts in thin-film organic transistors

2004Journal article Open access
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dc.contributor.authorGomes, Henrique L.
dc.contributor.authorStallinga, Peter
dc.contributor.authorDinelli, F.
dc.contributor.authorMurgia, M.
dc.contributor.authorBiscarini, F.
dc.contributor.authorDe Leeuw, D. M.
dc.contributor.authorMuck, T.
dc.contributor.authorGeurts, J.
dc.contributor.authorMolenkamp, L. W.
dc.contributor.authorWagner, V.
dc.date.accessioned2015-06-26T14:18:46Z
dc.date.available2015-06-26T14:18:46Z
dc.date.issued2004
dc.description.abstractAn investigation into the stability of metal-insulator-semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular, the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow stretched-hyperbola-type behavior, in agreement with the formalism developed to explain metastability in amorphous-silicon thin-film transistors. Using this model, quantification of device stability is possible. Temperature-dependent measurements show that there are two processes involved in the threshold voltage shift, one occurring at Tapproximate to220 K and the other at Tapproximate to300 K. The latter process is found to be sample dependent. This suggests a relation between device stability and processing parameters. (C) 2004 American Institute of Physics.
dc.identifier.doihttps://dx.doi.org/10.1063/1.1713035
dc.identifier.issn0003-6951
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6629
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmerican Institute of Physics
dc.relation.isbasedonP-000-ASD
dc.titleBias-induced threshold voltages shifts in thin-film organic transistors
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage3186
oaire.citation.issue16
oaire.citation.startPage3184
oaire.citation.titleApplied Physics Letters
oaire.citation.volume84
person.familyNameGomes
person.familyNameStallinga
person.givenNameHenrique Leonel
person.givenNamePeter
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0003-3664-4740
person.identifier.orcid0000-0002-9581-6875
person.identifier.scopus-author-id7005305880
person.identifier.scopus-author-id6701332987
rcaap.rightsopenAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication.latestForDiscoverya81fc5fb-94ec-4160-bfdc-ea33cfdbf216

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