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Resistive switching of silicon-silver thin film devices in flexible substrates

2020-03Journal article Restricted
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dc.contributor.authorDias, C.
dc.contributor.authorLeitao, D. C.
dc.contributor.authorFreire, C. S. R.
dc.contributor.authorH, Gomes
dc.contributor.authorCardoso, S.
dc.contributor.authorVentura, J.
dc.date.accessioned2021-06-24T11:35:48Z
dc.date.available2021-06-24T11:35:48Z
dc.date.issued2020-03
dc.description.abstractNovel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.
dc.description.sponsorshipFEDER (Fundo Europeu de Desenvolvimento Regional) funds through the COMPETE 2020 Operational Programme for Competitiveness and Internationalisation (POCI), Portugal 2020
dc.description.sponsorshipFCT (Fundacao para a Ciencia e a Tecnologia)Portuguese Foundation for Science and Technology
dc.description.sponsorshipMinisterio da Ciencia, Tecnologia e Inovacao [POCI-010145 FEDER007274]
dc.description.sponsorshipAssociated LaboratoryInstitute of Nanoscience and Nanotechnology
dc.description.sponsorshipFSE/POPHEuropean Social Fund (ESF)
dc.description.sponsorshipFCTPortuguese Foundation for Science and TechnologyEuropean Commission [SFRH/BD/101661/2014, CEECIND/00464/2017]
dc.description.sponsorshipFCT through the IN Associated Laboratory
dc.description.sponsorshipNational Infrastructure Roadmap [NORTE-01-0145-FEDER-22090]
dc.description.sponsorship[PTDC/CTM-NAN/122868/2010]
dc.description.sponsorship[PTDC/CTM-NAN/3146/2014]
dc.description.sponsorship[PTDC/NAN-MAT/31688/2017]
dc.description.sponsorship[UID/CTM/50011/2019]
dc.description.sponsorship[UID/EEA/50008/2019]
dc.description.sponsorship[POCI-01-0145-FEDER-016623]
dc.description.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1088/1361-6528/ab5eb7
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/10400.1/16540
dc.language.isoeng
dc.peerreviewedyes
dc.publisherIOP Publishing
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectResistive switching
dc.subjectMemristors
dc.subjectFlexible electronics
dc.subjectCellulose-based electronics
dc.subjectMetallic filaments
dc.titleResistive switching of silicon-silver thin film devices in flexible substrates
dc.typejournal article
dspace.entity.typePublication
oaire.citation.issue13
oaire.citation.startPage135702
oaire.citation.titleNanotechnology
oaire.citation.volume31
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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