Publication
Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)
| dc.contributor.author | Taylor, D. M. | |
| dc.contributor.author | Gomes, Henrique L. | |
| dc.contributor.author | Underhill, A. E. | |
| dc.contributor.author | Edge, S. | |
| dc.contributor.author | Clemenson, P. I. | |
| dc.date.accessioned | 2015-06-26T14:18:45Z | |
| dc.date.available | 2015-06-26T14:18:45Z | |
| dc.date.issued | 1991 | |
| dc.description.abstract | Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen. | |
| dc.identifier.doi | https://dx.doi.org/10.1088/0022-3727/24/11/019 | |
| dc.identifier.issn | 0022-3727 | |
| dc.identifier.other | AUT: HGO00803; | |
| dc.identifier.uri | http://hdl.handle.net/10400.1/6624 | |
| dc.language.iso | eng | |
| dc.peerreviewed | yes | |
| dc.publisher | IOP Publishing | |
| dc.relation.isbasedon | P-008-W1F | |
| dc.title | Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene) | |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.citation.endPage | 2038 | |
| oaire.citation.startPage | 2032 | |
| oaire.citation.title | Journal of Physics D: Applied Physics | |
| oaire.citation.volume | 24 | |
| person.familyName | Gomes | |
| person.givenName | Henrique Leonel | |
| person.identifier.orcid | 0000-0003-3664-4740 | |
| person.identifier.scopus-author-id | 7005305880 | |
| rcaap.rights | restrictedAccess | |
| rcaap.type | article | |
| relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
| relation.isAuthorOfPublication.latestForDiscovery | 6da677b9-927f-423d-8657-448a0dccb67c |
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