Publication
Schottky barriers to semiconducting polymers
dc.contributor.author | Taylor, D. M. | |
dc.contributor.author | Gomes, Henrique L. | |
dc.date.accessioned | 2015-06-26T14:18:44Z | |
dc.date.available | 2015-06-26T14:18:44Z | |
dc.date.issued | 1994 | |
dc.description.abstract | Schottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky barriers on the development of electronic devices built from semiconducting polymers prompted this research. The article investigated the dc and ac admittance of Schottky barrier which occur at the interface between aluminum and poly(3-methyl thiophene) made ready by electropolymerisation. The experiment revealed that the interfacial layers occurring in polymer Schottky barriers is significant in the response of the controlling device. | |
dc.identifier.doi | https://dx.doi.org/ 10.1049/ip-cds:19971003 | |
dc.identifier.issn | 0963-3308 | |
dc.identifier.other | AUT: HGO00803; | |
dc.identifier.uri | http://hdl.handle.net/10400.1/6614 | |
dc.language.iso | eng | |
dc.peerreviewed | yes | |
dc.publisher | IET | |
dc.relation.isbasedon | P-008-W1D | |
dc.title | Schottky barriers to semiconducting polymers | |
dc.type | conference object | |
dspace.entity.type | Publication | |
oaire.citation.conferencePlace | London, UK | |
oaire.citation.endPage | 122 | |
oaire.citation.issue | 2 | |
oaire.citation.startPage | 117 | |
oaire.citation.title | IEE Proceedings - Circuits, Devices and Systems | |
oaire.citation.title | Electronics Division Colloquium on Molecular Electronic Devices | |
oaire.citation.volume | 144 | |
person.familyName | Gomes | |
person.givenName | Henrique Leonel | |
person.identifier.orcid | 0000-0003-3664-4740 | |
person.identifier.scopus-author-id | 7005305880 | |
rcaap.rights | restrictedAccess | |
rcaap.type | conferenceObject | |
relation.isAuthorOfPublication | 6da677b9-927f-423d-8657-448a0dccb67c | |
relation.isAuthorOfPublication.latestForDiscovery | 6da677b9-927f-423d-8657-448a0dccb67c |
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