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Schottky barriers to semiconducting polymers

dc.contributor.authorTaylor, D. M.
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:44Z
dc.date.available2015-06-26T14:18:44Z
dc.date.issued1994
dc.description.abstractSchottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky barriers on the development of electronic devices built from semiconducting polymers prompted this research. The article investigated the dc and ac admittance of Schottky barrier which occur at the interface between aluminum and poly(3-methyl thiophene) made ready by electropolymerisation. The experiment revealed that the interfacial layers occurring in polymer Schottky barriers is significant in the response of the controlling device.
dc.identifier.doihttps://dx.doi.org/ 10.1049/ip-cds:19971003
dc.identifier.issn0963-3308
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6614
dc.language.isoeng
dc.peerreviewedyes
dc.publisherIET
dc.relation.isbasedonP-008-W1D
dc.titleSchottky barriers to semiconducting polymers
dc.typeconference object
dspace.entity.typePublication
oaire.citation.conferencePlaceLondon, UK
oaire.citation.endPage122
oaire.citation.issue2
oaire.citation.startPage117
oaire.citation.titleIEE Proceedings - Circuits, Devices and Systems
oaire.citation.titleElectronics Division Colloquium on Molecular Electronic Devices
oaire.citation.volume144
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typeconferenceObject
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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