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Modeling electrical characteristics of thin-film field-effect transistors III. Normally-on devices

dc.contributor.authorStallinga, Peter
dc.contributor.authorGomes, Henrique L.
dc.date.accessioned2015-06-26T14:18:45Z
dc.date.available2015-06-26T14:18:45Z
dc.date.issued2008
dc.description.abstractThe thin-film field-effect-transistor model recently developed is applied to devices based on materials that already show current even without a bias present at the gate resulting in so-called normally-on transistors. These fall in three categories: (i) narrow-band-gap semiconductors, where the thermal energy is sufficient to excite carriers across the band-gap, here analyzed for unipolar and ambipolar materials, (ii) doped semiconductors, and (iii) metals. It is shown what the impact is on the IV and transfer curves. (C) 2008 Elsevier B.V. All rights reserved.
dc.identifier.doihttps://dx.doi.org/10.1016/j.synthmet.2008.03.011
dc.identifier.issn0379-6779
dc.identifier.otherAUT: PJO01566; HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6622
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier
dc.relation.isbasedonP-003-YDF
dc.titleModeling electrical characteristics of thin-film field-effect transistors III. Normally-on devices
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage478
oaire.citation.startPage473
oaire.citation.titleSynthetic Metals
oaire.citation.volume158
person.familyNameStallinga
person.familyNameGomes
person.givenNamePeter
person.givenNameHenrique Leonel
person.identifier2477494
person.identifier.ciencia-idC917-2333-5797
person.identifier.orcid0000-0002-9581-6875
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id6701332987
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublicationa81fc5fb-94ec-4160-bfdc-ea33cfdbf216
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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