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Memristors using solution-based IGZO nanoparticles

2017-11Journal article Open access
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dc.contributor.authorRosa, Jose
dc.contributor.authorKiazadeh, Asal
dc.contributor.authorSantos, Lidia
dc.contributor.authorDeuermeier, Jonas
dc.contributor.authorMartins, Rodrigo
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorFortunato, Elvira
dc.date.accessioned2018-12-07T14:57:54Z
dc.date.available2018-12-07T14:57:54Z
dc.date.issued2017-11
dc.description.abstractSolution-based indium-gallium-zinc oldde (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal-insulator-metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low programming voltages of +/- 1 V, on/off ratios higher than 10, high endurance, and a retention time of up to 104 s. The better performing devices were achieved with annealing temperatures of 200 degrees C and using asymmetric electrode materials of titanium and silver. The physics behind the improved switching properties of the devices is discussed in terms of the oxygen deficiency of IGZO. Temperature analysis of the conductance states revealed a nonmetallic filamentary conduction. The presented devices are potential candidates for the integration of memory functionality into low-cost System-on-Panel technology.
dc.description.sponsorshipNational Funds through FCT - Portuguese Foundation for Science and Technology [UID/CTM/50025/2013, SFRH/BDP/99136/2013]; FEDER [POCI-01-0145-FEDER-007688]
dc.description.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1021/acsomega.7b01167
dc.identifier.issn2470-1343
dc.identifier.urihttp://hdl.handle.net/10400.1/11762
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmerican Chemical Society
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectResistive switching memory
dc.subjectThin-film transistors
dc.subjectPerformance improvement
dc.subjectHigh-speed
dc.subjectMobility
dc.subjectDevices
dc.subjectReram
dc.subjectField
dc.titleMemristors using solution-based IGZO nanoparticles
dc.typejournal article
dspace.entity.typePublication
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/5876/UID%2FCTM%2F50025%2F2013/PT
oaire.citation.endPage8372
oaire.citation.issue11
oaire.citation.startPage8366
oaire.citation.titleACS Omega
oaire.citation.volume2
oaire.fundingStream5876
person.familyNameKiazadeh
person.familyNameGomes
person.givenNameAsal
person.givenNameHenrique Leonel
person.identifier.ciencia-id0B15-2FBD-E1BA
person.identifier.orcid0000-0002-8422-5762
person.identifier.orcid0000-0003-3664-4740
person.identifier.ridK-3193-2016
person.identifier.scopus-author-id36702810600
person.identifier.scopus-author-id7005305880
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccess
rcaap.typearticle
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relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
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