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Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress

2015-06Journal article Open access
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dc.contributor.authorKiazadeh, Asal
dc.contributor.authorSalgueiro, Daniela
dc.contributor.authorBranquinho, Rita
dc.contributor.authorPinto, Joana
dc.contributor.authorGomes, Henrique L.
dc.contributor.authorBarquinha, Pedro
dc.contributor.authorMartins, Rodrigo
dc.contributor.authorFortunato, Elvira
dc.date.accessioned2018-12-07T14:53:29Z
dc.date.available2018-12-07T14:53:29Z
dc.date.issued2015-06
dc.description.abstractIn this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20% of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and emptying mechanism. In ambient atmosphere, the threshold voltage shift no longer saturates, stability is degraded and the recovering process is impeded. We suggest that the trapping time during the stress and detrapping time in recovering are affected by oxygen adsorption/desorption processes. The time constants extracted from stretched exponential fitting curves are approximate to 10(6) s and 10(5) s in vacuum and air, respectively. (C) 2015 Author(s).
dc.description.sponsorshipFEDER through COMPETE 2020 Programme; European Communities 7th Framework Programme (i-FLEXIS project) [ICT-2013-10-611070]; National Funds through FCT-Portuguese Foundation for Science and Technology [UID/CTM/50025/2013, EXCL/CTM-NAN/0201/2012]
dc.description.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1063/1.4919057
dc.identifier.issn2166-532X
dc.identifier.urihttp://hdl.handle.net/10400.1/11541
dc.language.isoeng
dc.peerreviewedyes
dc.publisherAmer Inst Physics
dc.relationMultifunctional Nanoscale Oxide Materials
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleOperational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleMultifunctional Nanoscale Oxide Materials
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/5876/UID%2FCTM%2F50025%2F2013/PT
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/3599-PPCDT/EXCL%2FCTM-NAN%2F0201%2F2012/PT
oaire.citation.issue6
oaire.citation.startPage62804
oaire.citation.titleAPL Materials
oaire.citation.volume3
oaire.fundingStream5876
oaire.fundingStream3599-PPCDT
person.familyNameKiazadeh
person.familyNameGomes
person.givenNameAsal
person.givenNameHenrique Leonel
person.identifier.ciencia-id0B15-2FBD-E1BA
person.identifier.orcid0000-0002-8422-5762
person.identifier.orcid0000-0003-3664-4740
person.identifier.ridK-3193-2016
person.identifier.scopus-author-id36702810600
person.identifier.scopus-author-id7005305880
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.rightsopenAccess
rcaap.typearticle
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