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Charge transport in poly(3-methylthiophene) schottky barrier diodes

dc.contributor.authorGomes, Henrique L.
dc.contributor.authorTaylor, D. M.
dc.contributor.authorUnderhill, A. E.
dc.date.accessioned2015-06-26T14:18:44Z
dc.date.available2015-06-26T14:18:44Z
dc.date.issued1993
dc.description.abstractSchottky-barrier devices were formed from electropolymerised films of poly (3-methylthiophene) (PMeT). Thermal annealing of a partially undoped film led to diodes with rectification ratios as high as 5900 at 1 V and 50,000 at 2.5 V and ideality factors slightly above 2. The temperature dependence of ac loss tangent and forward currents are identical suggesting that bulk effects dominate device behaviour event at very low forward voltages. Below 250 K forward currents are essentially independent of temperature. Preliminary TSC measurements show the presence of at least two trapping levels in the devices. © 1993.
dc.identifier.doihttps://dx.doi.org/ 10.1016/0379-6779(93)90560-J
dc.identifier.issn0379-6779
dc.identifier.otherAUT: HGO00803;
dc.identifier.urihttp://hdl.handle.net/10400.1/6619
dc.language.isoeng
dc.peerreviewedyes
dc.publisherElsevier
dc.relation.isbasedonP-008-W1E
dc.titleCharge transport in poly(3-methylthiophene) schottky barrier diodes
dc.typejournal article
dspace.entity.typePublication
oaire.citation.endPage4081
oaire.citation.issue1
oaire.citation.startPage4076
oaire.citation.titleSynthetic Metals
oaire.citation.volume57
person.familyNameGomes
person.givenNameHenrique Leonel
person.identifier.orcid0000-0003-3664-4740
person.identifier.scopus-author-id7005305880
rcaap.rightsrestrictedAccess
rcaap.typearticle
relation.isAuthorOfPublication6da677b9-927f-423d-8657-448a0dccb67c
relation.isAuthorOfPublication.latestForDiscovery6da677b9-927f-423d-8657-448a0dccb67c

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