Resistive switching in nanostructured thin films

Planar capacitor structures based on granular films composed of nanometric ferromagnetic grains embedded in an insulating Al2O3 matrix can switch between a high-conductance and a low-conductance state. The switching properties are induced by a forming process. The ON/OFF resistance ratio is as high as 104 under an electrical field of only 15 kV/m. This resistive switching is accompanied by a capacitive switching between two well-defined voltage-independent states, a behavior that is not readily explained by the filamentary type of conduction.

URI

http://hdl.handle.net/10400.1/3319

Citação

Silva, H. G.; Gomes, H. L.; Pogorelov, Yu. G.; Stallinga, P.; De Leeuw, D. M.; Araujo, J. P.; Sousa, J. B.; Meskers, S. C. J.; Kakazei, G. N.; Cardoso, S.; Freitas, P. P. Resistive switching in nanostructured thin films, Applied Physics Letters, 94, 20, 202107-202107, 2009.

Editora

American Institute of Physics (AIP)

DOI

http://dx.doi.org/10.1063/1.3134484

Coleções

FCT2-Artigos (em revistas ou actas indexadas)

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